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80100 ULQ2002 MMBZ5252 MMBV2101 1001K AM1408N7 MAX5523 P3601MSH
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  Datasheet File OCR Text:
 SMD Type
Silicon PNP Epitaxial 2SA1587
Transistors
Features
High voltage VCEO=-120V High hFE hFE=200 to 700 Low noise Small package
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VEBO VCEO IC IB PC Tj Tstg Rating -120 -120 -5 -100 -20 100 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol ICBO IEBO hFE VCE (sat) fT Cob NF Testconditons VCB = -120 V, IE = 0 VEB = -5 V, IC = 0 VCE = -6 V, IC = -2 mA IC = -10 mA, IB = -1 mA VCE = -6 V, IE = 1 mA VCB = -10 V, IE = 0, f = 1 MHz VCE=-6 V, IC=-0.1 mA, f=1 kHz,Rg =10KU 100 4 1.0 10 200 Min Typ Max -0.1 -0.1 700 0.3 V MHz pF dB Unit iA iA
hFE Classification
Marking Rank hFE CG GR 200 400 CL BL 350 700
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